Semiconductor device including a tcam having a storage element formed with a dram

ABSTRACT

In order to improve the discharging speed of potential from a match line, a semiconductor device includes a capacitor, a memory transistor having a source/drain region connected to a storage node of the capacitor, a search transistor having a gate electrode connected to the storage node, and a stacked contact connecting a match line and the source/drain region of the search transistor. The storage node has a configuration in which a sidewall of the storage node facing the match line partially recedes away from the stacked contact such that a portion of the sidewall in front of the stacked contact in plan view along the direction of the match line is located farther away from the stacked contact than the remaining portion of the sidewall.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device including a TCAM(Ternary Content Addressable Memory) having a storage element formedwith a DRAM (Dynamic Random Access Memory).

2. Description of the Background Art

As a memory storing information in a TCAM, SRAMs (Static Random AccessMemory) are generally employed and available as a product. When an SRAMis employed, a total of 16 transistors, i.e. 12 transistorscorresponding to two CMOS-SRAMs and 4 search transistors for a searchoperation, is required per cell. Therefore, the cells occupy a largearea to become a bottleneck in reducing the size of the apparatus. Inview of the foregoing, an approach of forming the storage memory unitwith a DRAM has been proposed. (For example, refer to U.S. Pat. Nos.6,262,907B1, 6,320,777B1 and 6,529,397B2.

In general, the cell of a TCAM is composed of a retain transistor unitidentified as a storage memory, and a search transistor unit. When aDRAM is employed for the retain transistor unit, two DRAM memorytransistors, and two capacitors connected to the source/drain region ofthat memory transistor are arranged at the retain transistor unit. Atthe search transistor unit, a first search transistor having its gateconnected to the storage node of the two capacitors, and driven by thenode, and a second search transistor having its source/drain regionconnected with the source/drain region of the first search transistorare arranged.

A capacitor stores digital information by retaining charge. A TCAMmemory cell is arranged at a position where a word line WL and a matchline ML cross a bit line open BL, a search line SL, and a complementarysearch line/SL. The TCAM memory cells are arranged in a matrix to carryout charge processing (for example, refer to U.S. Pat. No. 6,262,907B1).

In a TCAM, the three combinations of (High, Low), (Low, High), (Low,Low) of the storage node potentials of the two capacitors are set tocorrespond to the ternary. Between match line ML and the groundpotential are arranged two rows of search transistors, i.e. first andsecond search transistors corresponding to the two capacitors set forthabove, having their source/drains connected to each other. When one ofthe two rows attains an ON state from the match line to the ground, thepotential of match line ML is pulled to GND, otherwise, match line MLremains at the level of precharged potential. In practice, a pluralityof TCAM cells are connected to one match line. In the case where thepotential of the match line is not pulled out by all the cells, thesearch corresponds to a match. Data search is conducted readily by usinga semiconductor device for searching set forth above.

The performance of such a semiconductor device with a search function isevaluated based on the sps (search per second) unit indicating how manytimes a search can be conducted in one second. A general search devicecarries out searching at, for example, 100M (mega) sps, i.e. in theorder of 10⁸ times in one second. In such a search operation, the pulldown speed of a potential from a match line ML at a high state is acritical factor for high speed operation. The discharge of potentialfrom match line ML can be increased in speed by: (a1) reducing thecapacitance of match line ML; and (a2) increasing the drivability of thesearch transistor that draws out charge.

SUMMARY OF THE INVENTION

An object of the present invention is to provide a semiconductor deviceincluding a TCAM having a storage element with a DRAM, which can havethe discharge speed of potential from a match line improved.

A semiconductor device according to an aspect of the present inventionincludes a cell electrically connected to a metal line. The cellincludes a capacitor, a memory transistor having a source/drain regionconnected to a storage node of the capacitor, a search transistor havinga gate electrode connected to the storage node of the capacitor, and astacked contact electrically connecting a match line of the metal linewith the source/drain region of the search transistor. The storage nodehas a configuration in which a sidewall of the storage node facing thestacked contact partially recedes away from the stacked contact suchthat a portion of the sidewall in front of the stacked contact in planview along the direction of the match line is located farther away fromthe stacked contact than the remaining portion of the sidewall.

A semiconductor device according to another aspect of the presentinvention includes a cell electrically connected to a metal line. Thecell includes a capacitor, a memory transistor having a source/drainregion connected to a storage node of the capacitor, a search transistorhaving a gate electrode connected to the storage node of the capacitor,and a stacked contact electrically connecting a match line of the metalline with the source/drain region of the search transistor. The storagenode has a configuration in which a sidewall of the storage node facingthe stacked contact partially recedes away from the stacked contact suchthat a region including a side edge portion of the sidewall in front ofthe stacked contact in plan view along the direction of the match lineis cut out from a rectangle with the remaining portion of the side edgeportion left.

By virtue of the semiconductor device set forth above, the distance fromthe stacked contact that connects a-match line with the source/drainregion of the search transistor to the capacitance contributing portionof the storage node can be increased to reduce the capacitance of thematch line. As a result, the operation of the TCAM can be increased inspeed.

The foregoing and other objects, features, aspects and advantages of thepresent invention will become more apparent from the following detaileddescription of the present invention when taken in conjunction with theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view of a TCAM cell according to a first embodiment ofthe present invention.

FIG. 2 is a plan view of a configuration of a layer upper than the planview of FIG. 1.

FIG. 3 is a sectional view of a TCAM cell taken along line III-III′ ofFIG. 1.

FIG. 4 is a circuit diagram of a TCAM cell of FIG. 1.

FIG. 5 is a plan view of a semiconductor device for searching havingTCAM cells arranged in a matrix of rows and columns.

FIG. 6 shows the voltage swing in a search line and a match line.

FIG. 7 is a plan view of a TCAM cell according to a second embodiment ofthe present invention.

FIG. 8 is a sectional view of the TCAM cell taken along line VIII-VIII′of FIG. 7.

FIG. 9 is a plan view of a TCAM cell according to a third embodiment ofthe present invention.

FIG. 10 is a sectional view of the TCAM cell taken along line X-X′ ofFIG. 9.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Embodiments of the present invention will be described hereinafter withreference to the drawings.

First Embodiment

FIGS. 1-5 correspond to a semiconductor device according to a firstembodiment of the present invention. In the circuit diagram of FIG. 4corresponding to one bit of a TCAM cell identified as the presentsemiconductor device, the edge of the storage node at the stackedcontact side recedes away from the stacked contact so that the distancetherebetween is increased. FIG. 5 represents an entire configuration ofa semiconductor device for searching having the foregoing one bit ofTCAM cells arranged.

Referring to FIG. 4, a word line WL and a bit line BL are arranged so asto cross each other, likewise a general DRAM. Data is written and readwith respect to a capacitor in a TCAM cell disposed at the crossingbetween a word line and a bit line. The word line is connected to a wordline driver that drives that word line. A bit line BL is connected to asense amplifier that reads and writes data.

A search line SL and a complementary search line /SL form a pair ofsearch lines. Both search lines are connected to a search line driver.Match line ML is connected to a match line amplifier that senses thestate of that match line. In the embodiment of FIG. 4, TCAM cells arearranged in a two-dimensional manner to constitute a memory array. Oneword line WL, two bit lines BL, one pair of search lines (SL, /SL) andone match line ML are connected to one TCAM cell. Although not depictedin FIG. 4, a GND line supplying ground potential and a cell plateidentified as an opposite electrode of the capacitor are associated witha memory array.

Two bit lines BL1 and BL2 are explicitly illustrated in the TCAM cellcircuit configuration of FIG. 4 since they are independent lines, notconstituting a pair. They are required to write LOW to the twocapacitors in the TCAM cell. For the sake of a bit line pair, an openbit line architecture or the like that forms a pair with a bit line ofanother cell array is applied. A cell plate potential Vcp is applied tothe cell plates of two capacitors C1 and C2. A common ground potentialline GND is connected to the source/drain region of one of searchtransistors that will be described afterwards having its gate connectedto a search line or a complementary search line.

Six transistors and two capacitors constitute one TCAM cell. TransistorsT1 and T2 are memory transistors introducing charge into respectivecapacitors C1 and C2 for writing (referred to as “retain transistor”hereinafter). Transistors T3, T4, T5 and T6 are transistors that conducta search operation of the TCAM (referred to as “search transistor”hereinafter). The gate electrode of search transistor T3 is connected toa node N1. The gate transistor of search transistor T4 is connected to asearch line SL. Similarly, search transistors T5 and T6 have their gateelectrodes connected to a node N2 and a complementary search line,respectively.

Referring to FIG. 1, an active region 1 is provided at retain transistorT1. Additionally, an active region 2 is provided at search transistorsT3 and T4. A common gate electrode 3 is provided for retain transistorsT1 and T2. A gate 4 of search transistor T3 is connected to node N1,i.e., a storage node. A gate 5 of search transistor T4 is connected to asearch line. The reference characters of T1-T6 designated at the channelregions overlapping the gate of respective transistors correspond torespective transistors in the circuit diagram of FIG. 4.

A shared contact 6 has a capacitor lower electrode (storage node) SNconnected to one source/drain region of retain transistor T1 and to gate4 of search transistor T3. This connection through shared contact 6 iseffected by the step of forming an opening of a bit line contact and astorage node contact at the same time. Cell plate hole patterns 8, 9 and10 are indicated corresponding to transistors T1, T3 and T4,respectively. The remaining region after such rectangular hole patternsare bored corresponds to a cell plate. In the plan view of FIG. 1,stacked contacts 11, 12, 13 and 14 having a lower BS plug and an uppercontact stacked are depicted. As used herein, a BS plug refers to theplug of a bit line contact or a storage node contact. Stacked contact 11connects one source/drain of retain transistor T1 to the bit line.Stacked contact 12 connects an active gate of a search transistor to asearch line. Stacked contact 13 connects an active region to a matchline. Stacked contact 14 connects an active region to a GND line.

The present embodiment is characterized in that the side edge of storagenode SN facing stacked contact 13 partially recedes away from stackedcontact 13, whereby the distance d between storage node SN and stackedcontact 13 is increased.

Lines A-A′ and B-B′ are auxiliary lines, indicating that the cells, whenarranged in an array, are axially symmetric about respective auxiliarylines. Although only one cell is depicted along the direction of suchauxiliary lines, the cell array has translational symmetry along thedirection of the auxiliary line. The above description to retaintransistor T1, as well as to search transistors T3 and T4 apply toretain transistor T2 and search transistors T5 and T6, respectively.

In the arrangement of an upper layer above the stacked contact of FIG.2, auxiliary lines A-A′ and B-B′ are symmetric lines located atpositions identical to those of FIG. 1. Stacked contacts 11, 12, 13 and14 are identical to those of FIG. 1. A bit line 31 is formed of a firstmetal line. A metal pad 32 to pull up a search line is also formed ofthe first metal line. Additionally, a metal pad 33 to pull up a matchline and a metal pad 34 to pull up a GND line are formed of the firstmetal line.

Furthermore, a first through hole 35 to pull up a search line to afurther upper layer, a first through hole 36 to pull up a match line toan upper layer, and a first through hole 37 to pull up a GND line to anupper layer are provided.

The wiring set forth below are formed of a second metal line. A metalpad 38 to pull up a search line to a further upper layer, a match line39 of the upper layer, and a GND line 40 of the upper layer arerespectively formed. The search line of the present embodiment is formedof a metal line of a further upper layer, for example, formed of a thirdmetal line. The arrangement of such further upper layers will not bedescribed here since they deviate from the characteristic feature of thepresent embodiment.

Referring to the sectional view of FIG. 3 taken along line III-III′ ofFIG. 1, isolation oxide films 42 and 43 are provided at the surfacelayer of a p type silicon substrate 41. At the element region betweenthe isolation oxide films, an n⁻ diffusion layer 44 of a retaintransistor at the storage node side and an n⁺ diffusion layer 45 of amatch line contact of a search transistor are formed. A BS interlayerinsulation film 46 and BS polysilicon plugs 47 and 48 are located onsilicon substrate 41. A nitride film 49 is disposed on BS interlayerinsulation film 46 to temporarily stop the etching of the storage nodeand the first contact. A storage node interlayer insulation film 50 isdeposited on nitride film 49.

A capacitor is formed of a storage node SN identified as the lowerelectrode of a capacitor, a dielectric film 67 above storage node SN,and a cell plate 68 identified as an upper electrode. A cell plate flatregion 68 a extends over interlayer insulation film 50. A first contactinterlayer insulation film 54 is deposited on this cell plate. If aplasma oxide film or the like that has poor coverage is employed indepositing first contact interlayer insulation film 54, there is apossibility of a void V indicated by the chain dotted line generated atthe recess of the capacitor depending upon the condition.

A first contact 57 and a barrier metal 56 thereof formed of tungsten (W)are provided piercing first contact interlayer insulation film 54. Thefirst metal line of the present embodiment is formed of a copper (Cu)line by single damascene. An etching stopper film 58 formed of a nitridefilm is disposed on first contact interlayer insulation film 54. Aninsulation film 59 is formed on etching stopper film 58, in which afirst interconnection layer 61 is embedded. First interconnection layer61 is formed piercing insulation film 59 with barrier metal 60therebetween.

A second interconnection layer of the present embodiment is formed of aCu line by dual damascene. An etching stopper film 62 formed of anitride film is disposed on insulation film 59. A first through holeinterlayer insulation film 63 is deposited upon etching stopper film 62.A first through hole unit formed of a Cu line by dual damascene isprovided piercing first through hole interlayer insulation film 63 withbarrier metal 64 therebetween. A second interconnection layer 66 isarranged on this first through hole unit. The arrangement of a metalline of a further upper layer will not be described here since theydeviate from the characteristic feature of the present embodiment.

The operation of a TCAM cell set forth above will be described based onTable 1 hereinafter. The data storage state of one TCAM cell includesthe three type set forth below. Ternary of the TCAM corresponds to thesethree types. Specifically, they correspond to (N1, N2)=(High, Low),(Low, High) and (Low, Low). The states of data search also includesthree types, i.e. (SL, /SL)=(High, Low), (Low, High) and (Low, Low). Therow contributing to match line ML indicates what change in state willoccur with respect to a match line ML having the cell previously pulledup to a high state when a search is conducted with the search data of(SL, /SL) for a TCAM cell at the storage state of (N1, N2).

TABLE 1 Node Search line State of search data potential potentialContribution to with respect of N1 N2 SL /SL match line ML stored dataHigh Low High Low High → Low Non-match Low High High → High Match LowLow High → High Mask Low High High Low High → High Match Low High High →Low Non-match Low Low High → High Mask Low Low High Low High → High MaskLow High High → High Mask Low Low High → High Mask

The combination contributing to transition of match line ML from a Highstate to a Low state includes the two types of: searching by (SL, /SL)High, Low) for (N1, N2)=(High, Low); and searching by (SL, /SL)=(Low,High) for (N1, N2)=(Low, High). The former corresponds to the case wheretransistors T3 and T4 of FIG. 4 connected in series are turned ON, andmatch line ML is pulled down to GND from a High state. The lattercorresponds to the state where transistors T5 and T6 connected in seriesare turned ON. These are referred to as a non-match state of search data(SL, /SL) with respect to stored data (N1, N2).

In contrast, a matching state includes the cases where search data (SL,/SL)=(Low, High) for stored data (N1, N2)=(High, Low), and search data(SL, /SL)=(High, Low) for stored data (N1, N2)=(Low, High). They do notcontribute to pulling down match line ML to GND since one of thetransistors of transistors T3 and T4 and transistors T5 and T6 connectedin series is OFF although the other is ON.

Further, there is a mask state where match line ML is not pulled to GND.When the stored data attains a mask state (N1, N2)=(Low, Low), or thesearch data attains a mask state (SL, /SL)=(Low, Low), the transistorsconnected in series do not conduct current. Therefore, match line ML isnot discharged to GND.

The above description applies to one TCAM cell. In practice, the datastorage and data searching set forth above are carried out over all thecells arranged in the array in the TCAM operation. As shown in FIG. 5, aplurality of TCAM cells are connected to one match line ML. Data searchis conducted simultaneously for all the TCAM cells connected to onematch line ML. Therefore, if there is even one non-match cell for onematch line ML, match line ML will be discharged from high to low. Matchline ML maintains a High state only when all the cells connected to onematch line ML have a matching state or a mask state with respect to thesearch data. Thus, a TCAM operation is carried out in which a search isconducted on stored data, i.e. stored contents, based on match lines MLremaining with a High state for only matching data (including maskstate) with respect to the search data, and indicating the address ofthe corresponding match (including mask state). The affix T (Ternary) isattached, implying that there are three values including a mask state inaddition to a match state and a non-match state. Those absent of a maskstate are called Binary CAM, or simply CAM.

The searching speed of the TCAM of the present invention will bedescribed hereinafter with reference to FIG. 6. FIG. 6 represents thetransition of a potential (V_(SL)) of a search line SL and a potential(V_(ML)) of a match line ML over time, i.e., along the time axis (t).Match line ML initially attaining a Low state rises from time t₁ toattain a High state of Vcc at time t₂. Then, a search commences, wherebythe current search line SL rises from time t₃ to attain the level of Vccat time t₄. The current match line ML is discharged to GND by anon-match, falling down from time t₄ (simplification, actually fallingdown during time t₃ to t₄ in practice), and attains the level of zero(0) volt at time t₆.

Time t₅ corresponding to the level of V_(ML) that is ⅕ Vcc representsthe threshold value for the match line amplifier to make a determinationthat match line ML attains a Low state. The match line amplifier startsits operation from time t₅. At the elapse of a margin time required tocomplete determination that all match lines of a non-match state havebeen pulled down, search line SL begins to fall from time t₇ and attainsthe level of zero (0) volt at time t₈.

Then, for the next search, match line ML begins to rise at time t₉ toattain the level of Vcc at time t₁₀. Search line SL begins to rise forsearch again from time t₁₁ to attain the level of Vcc at time t₁₂, andmatch line ML of a non-match begins to fall.

In addition to the above-described signal V_(SL) and signal V_(ML)indicated in solid lines in FIG. 6, a signal V_(SL) and a signal V_(ML)are indicated in dotted lines. It is to be noted that, following therise of match line ML during time t₁-t₂ and the rise of search line SLduring time t₃-t₄ conducted at the same time as those of the solidlines, signal V_(ML) of the dotted line rises earlier than signal V_(ML)of the solid line. According to the voltage transition following thedotted line, the threshold value for Low determination by the match lineamplifier comes at time t₅′ earlier than time t₅, and match line MLattains the level of zero (0) volt at time t₆′ earlier than time t₆.Therefore, the subsequent operation corresponding to the dotted line iscarried out earlier than that corresponding to the solid line. Searchline SL falls at time t₇′-t₈′, and match line ML rises at time t₉′-t₁₀′.At time t₁₁′-t₁₂′, search line SL for the next search rises. The fall ofa match line of a non-match state starts from time t₁₂′.

The time required for one search can be regarded as the starting time ofthe rise of the search line to the starting time of the rise of thesearch line for the next search. For the voltage swing corresponding tothe solid line, the time required for one search is (t₁₁-t₃). For thevoltage swing corresponding to the dotted line, the time required forone search is (t₁₁′-t₃). Since t₁₁′<t₁₁, the following relationship isestablished.

t ₁₁ ′−t ₃ <t ₁₁ −t ₃

It is therefore appreciated that the time required for one search isshorter in the case corresponding to the dotted line. In accordance withthe present embodiment, the capacitance of the match line can be reducedby setting the distance d between the storage node and the stackedcontact larger than that of a conventional configuration, as will bedescribed afterwards. Accordingly, assuming that the conventionalconfiguration corresponds to the voltage swing of the solid lines inFIG. 6, the voltage swing of the dotted line can be realized in thepresent embodiment.

As mentioned previously, the distance d between stacked contact (firstcontact) 13 connected to the match line and storage node SN becomes acritical factor in the capacitance of match line ML. The capacitance ofa match line includes the coupling capacitance between an adjacent lineand an upper line, as well as the capacitance with respect to thesubstrate. In the configuration of the present embodiment, the couplingcapacitance between stacked contact 13 and storage node SN is a majorfactor. When the storage node is as high as 0.5 to 2 μm, and the storagenode is increased in plan view to ensure a large capacitance of acapacitor, the foregoing distance d is so small that the couplingcapacitance will occupy approximately half the entire capacitance of thematch line. In the present embodiment, distance d can be increased bythe storage node taking a configuration in which the side edge facingthe stacked contact recedes away from the stacked contact in plan viewinstead of taking a simple rectangle. Thus, the capacitance of the matchline can be reduced as compared to a conventional case to prevent thecapacitance of the match line from becoming a bottleneck in increasingthe searching speed.

The shape of storage node SN of FIG. 1 in plan view is not a simpleanalogous reduction of a rectangle. The shape of storage node SN in planview has the side edge portion partially cut away. Therefore, the areaof the sidewall of the storage node is identical to that of aconventional rectangular storage node without a cutaway. Although thecapacitance of a capacitor generally corresponds to the sum of theportion contributing to the area of the sidewall and the portioncontributing to the area of the bottom, it is to be noted that thecontribution of the area of the sidewall is greater than that of thearea of the bottom since the sidewall area is larger than the bottomarea in the recess cylindrical capacitor of the present embodiment.Therefore, although the capacitance of the capacitor of the storage nodethat has a cut away configuration is slightly reduced by the reductionof the bottom area, the area of the sidewall is identical to that of astorage node absent of a cutaway, so that this reduction in capacitanceis small. By virtue of the present embodiment, the data searching speedcan be increased with little degradation in the data storage capabilityin a TCAM cell that employs a DRAM cell as a memory cell.

Second Embodiment

FIGS. 7 and 8 correspond to a TCAM cell identified as a semiconductordevice according to a second embodiment of the present invention. Thesecond embodiment is basically a modification of the first embodiment.Storage node SN takes a reverse T shape so as to further increase thedistance d from stacked contact 13 as compared to the first embodiment.The width of respective portions of storage node SN corresponding to thearm and the stem of the T shape, i.e., the horizontal region andvertical region, is set to the smallest width required to form a recesscylindrical capacitor.

Referring to FIG. 8, a capacitor includes a storage node SN of a lowerelectrode, a dielectric film 67, and a cell plate 68 of an upperelectrode. A cell plate flat portion 68 a is formed on interlayerinsulation film 50. The recess portion 69 of the recess cylindricalcapacitor is filled with interlayer insulation film 54 to suppressgeneration of a void. Generation of a void is suppressed since storagenode SN has a T-shape in plan view, reduced in the width of each region.Generation of a void is disadvantageous in that, during formation of afirst interconnection layer, the interconnection layer will fill thevoid to induce short-circuiting, or the barrier metal will not be formedso as to completely surround the copper line, which will induce downwarddiffusion of copper from the copper line to increase the possibility ofa defect.

In the present embodiment, the width of respective regions in thestorage node of a T shape in plan view is set to the limit that allowsformation of a recess cylindrical capacitor. Accordingly, distance d canbe further increased to further reduce the capacitance of the match lineas compared to that of the first embodiment. Although the capacitance ofthe capacitor is reduced corresponding to the smaller bottom area of thestorage node, the area of the sidewall does not change even if thecapacitor takes a T shape in plan view. Therefore, degradation in thedata retaining property of the DRAM is small. Furthermore, generation ofa void in recess 69 of the capacitor is suppressed to prevent generationof a defect such as short-circuiting.

Third Embodiment

A TCAM cell that is a semiconductor device according to a thirdembodiment of the present invention is shown in FIGS. 9 and 10. Thepresent embodiment is a modification of the second embodiment. Thepresent embodiment is characterized in that hole pattern 9 formed atcell plate flat portion 68 a in stacked contact 13 is increased thanhole pattern 10 of FIGS. 1 and 7 in the direction along auxiliary lineA-A′. As a result, the edge of the cell plate is located closer to therecess cylindrical portion, whereby distance d1 between stacked contact13 and the edge of hole pattern 9 of cell plate flat portion 68 a islarger than distance d1 of the second embodiment. Distance d1 betweenstacked contact 13 and the edge of hole pattern 9 of the cell plateshown in FIG. 10 is larger than that of the conventional case. Referringto FIG. 9, the cell plate extends out from storage node SN by a distanced2 required to cover storage node SN.

In accordance with the above-described configuration, the capacitance ofthe match line can be reduced by increasing the distance d1 betweenstacked contact 13 connected to match line ML and the cell plate. As aresult, the search operation of the TCAM can be further increased inspeed.

The embodiments of the present invention will be summarized hereinafterincluding those set forth above.

The above embodiment was described in which the storage node is axiallysymmetric about the center line passing through the center of thestorage node, parallel to the bit line. Storage node does notnecessarily have to take a symmetric configuration about the centerline. However, since the area of the sidewall facing the stacked contactis large due to the partial recession, the area of the sidewall at theopposite side can also be increased by taking an axially symmetricconfiguration about the center line. Accordingly, reduction in thecapacitance caused by setting the sidewall in a receding manner can beprevented.

In the above-described semiconductor device having the sidewall of thestorage node facing the stacked contact partially receding and theabove-described semiconductor device having the sidewall of the storagenode facing the stacked contact partially cut away, the storage node mayinclude a first rectangular strip extending along the direction of thematch line in plan view, and a second rectangular strip extendingoutwards in a direction crossing the match line from a side portiondiffering from the leading end of the first rectangular unit facing thestacked side, wherein the side portion of the second rectangular stripincludes a portion of a region in front of the stacked contact along thedirection of the match line.

The first rectangular strip may be taken as the arm of an inversed Tshape whereas the second rectangular strip may be taken as the stem ofan inversed T shape. If the above-described axial symmetricy about thecenter line is of no concern, the first rectangular strip may be the armregion of an L shape or a mirror-reversed L shape whereas the secondrectangular strip may be the stem portion of an L shape or amirror-reversed L shape.

In any of the semiconductor devices set forth above, a capacitor has acylindrical shape, and a cell plate located corresponding to a storagenode so as to sandwich a dielectric film includes a cell plate flatportion extending above and along an interlayer insulation film in whicha capacitor is embedded, from the top and outside the cylinder. The cellplate flat portion has a hole pattern including a stacked contact inplan view. The length of the hole pattern in the direction along thematch line may be set longer than the direction crossing the match line.

By virtue of the above-described configuration, distance d1 betweenstacked contact 13 connected to a match line and the cell plate can beincreased to reduce the capacitance of the match line. Thus, thesearching operation of the TCAM can be further increased in speed.

Although the present invention has been described and illustrated indetail, it is clearly understood that the same is by way of illustrationand example only and is not to be taken by way of limitation, the spiritand scope of the present invention being limited only by the terms ofthe appended claims.

1. A semiconductor device comprising: a cell electrically connected tometal lines, wherein said cell comprises a capacitor, a memorytransistor having a source/drain region connected to a storage node ofsaid capacitor, a search transistor having a gate electrode connected tothe storage node of said capacitor, and a contact electricallyconnecting a match line included among said metal lines with asource/drain region of said search transistor, said match line extendingin a first direction, wherein said storage node comprises a firstportion having a first width in said first direction in plan view and asecond portion having a second width larger than said first width insaid first direction in plan view, said contact comprises stackedpolysilicon, tungsten and copper portions, and the polysilicon portion,the tungsten portion, and the copper portion are vertically stacked fromthe source/drain region to reach the match line in this order. 2-6.(canceled)
 7. The semiconductor device according to claim 1, whereinsaid contact is adjacent to said first portion in said first direction.8. The semiconductor device according to claim 1, wherein said storagenode is symmetric about one center line of said storage node extendingin a second direction perpendicular to said first direction, and isasymmetric about another center line of said storage node extending insaid first direction, in plan view.
 9. The semiconductor deviceaccording to claim 1, wherein said storage node has opposite sides in asecond direction perpendicular to said first direction, and a first sideat said first portion side is shorter in length than a second side atsaid second portion side.
 10. The semiconductor device according toclaim 1, wherein said storage node is reduced stepwise in width fromsaid second portion towards said first portion.